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dc.contributor.authorTominov, R. V.en_US
dc.contributor.authorZamburg, E. G.en_US
dc.contributor.authorKhakhulin, D. A.en_US
dc.contributor.authorKlimin, V. S.en_US
dc.contributor.authorSmirnov, V. A.en_US
dc.contributor.authorChu, Y. H.en_US
dc.contributor.authorAgeev, O. A.en_US
dc.date.accessioned2019-04-03T06:48:02Z-
dc.date.available2019-04-03T06:48:02Z-
dc.date.issued2017-01-01en_US
dc.identifier.issn1742-6588en_US
dc.identifier.urihttp://dx.doi.org/10.1088/1742-6596/917/3/032023en_US
dc.identifier.urihttp://hdl.handle.net/11536/146889-
dc.description.abstractThe resistive switching effect in ZnxTiyHfzOi nanocomposite film, grown by pulsed laser deposition technique, was investigated. It was shown that ZnxTiyHfzOi film surface had a granular structure with 0.8 +/- 0.4 mu m(2) grain size and 7.3 +/- 5.1 nm grain height. Resistive switching from high resistance state (HRS) to low resistance state (LRS) was occurred at 0.9 +/- 0.4 V, and from LRS to HRS at 1.5 +/- 0.2 V. HRS/LRS ratio was 2.6. The results can be used for nanocomposite-metaloxide-film RRAM fabrication.en_US
dc.language.isoen_USen_US
dc.titleInvestigation of resistive switching of ZnxTiyHfzOi nanocomposite for RRAM elements manufacturingen_US
dc.typeProceedings Paperen_US
dc.identifier.doi10.1088/1742-6596/917/3/032023en_US
dc.identifier.journal4TH INTERNATIONAL SCHOOL AND CONFERENCE ON OPTOELECTRONICS, PHOTONICS, ENGINEERING AND NANOSTRUCTURES (SAINT PETERSBURG OPEN 2017)en_US
dc.citation.volume917en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000423729100026en_US
dc.citation.woscount0en_US
Appears in Collections:Conferences Paper


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