Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Tsai, Chih-Tsung | en_US |
dc.contributor.author | Chang, Ting-Chang | en_US |
dc.contributor.author | Liu, Po-Tsun | en_US |
dc.contributor.author | Yang, Po-Yu | en_US |
dc.date.accessioned | 2018-08-21T05:57:00Z | - |
dc.date.available | 2018-08-21T05:57:00Z | - |
dc.date.issued | 2006-01-01 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/146933 | - |
dc.description.abstract | Supercritical fluid technology([1,2]) is employed for the first time to passivate the defect states in amorphous silicon thin film transistors (a-Si.-H TFTs) at low temperature (150 degrees C). Due to supercritical fluids have gas-like properties of diffusivity and viscosity that allow it to efficiently carry H2O molecule into amorphous thin film and passivates defects at low temperature, Experiment results indicate that superior transfer characteristic is obtained and the density of states (DOS) is reduced significantly after the treatment of supercritical fluids mixed with water/propyl alcohol. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Application of supercritical fluids for amorphous silicon thin film transistors | en_US |
dc.type | Proceedings Paper | en_US |
dc.identifier.journal | IDW '06: PROCEEDINGS OF THE 13TH INTERNATIONAL DISPLAY WORKSHOPS, VOLS 1-3 | en_US |
dc.citation.spage | 751 | en_US |
dc.contributor.department | 光電工程學系 | zh_TW |
dc.contributor.department | 顯示科技研究所 | zh_TW |
dc.contributor.department | Department of Photonics | en_US |
dc.contributor.department | Institute of Display | en_US |
dc.identifier.wosnumber | WOS:000258482700191 | en_US |
Appears in Collections: | Conferences Paper |