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dc.contributor.authorTsai, Chih-Tsungen_US
dc.contributor.authorChang, Ting-Changen_US
dc.contributor.authorLiu, Po-Tsunen_US
dc.contributor.authorYang, Po-Yuen_US
dc.date.accessioned2018-08-21T05:57:00Z-
dc.date.available2018-08-21T05:57:00Z-
dc.date.issued2006-01-01en_US
dc.identifier.urihttp://hdl.handle.net/11536/146933-
dc.description.abstractSupercritical fluid technology([1,2]) is employed for the first time to passivate the defect states in amorphous silicon thin film transistors (a-Si.-H TFTs) at low temperature (150 degrees C). Due to supercritical fluids have gas-like properties of diffusivity and viscosity that allow it to efficiently carry H2O molecule into amorphous thin film and passivates defects at low temperature, Experiment results indicate that superior transfer characteristic is obtained and the density of states (DOS) is reduced significantly after the treatment of supercritical fluids mixed with water/propyl alcohol.en_US
dc.language.isoen_USen_US
dc.titleApplication of supercritical fluids for amorphous silicon thin film transistorsen_US
dc.typeProceedings Paperen_US
dc.identifier.journalIDW '06: PROCEEDINGS OF THE 13TH INTERNATIONAL DISPLAY WORKSHOPS, VOLS 1-3en_US
dc.citation.spage751en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.department顯示科技研究所zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.contributor.departmentInstitute of Displayen_US
dc.identifier.wosnumberWOS:000258482700191en_US
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