標題: Counter-intuitive Ge/Si/O interactions and Ge/Si symbiosis enable the creatation of new classes of exciting nanoelectronic and nanophotonic devices
作者: Hsueh, C. Y.
Huang, T. L.
Peng, K. P.
Kuo, M. H.
Lin, H. C.
Li, Pei-Wen
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-Jan-2017
摘要: We have successfully exploited multi-dimensional spaces of concentrations of the interstitial species, Si and Ge, geometries and compositions of the starting SiGe nano-pillar, and sources of Si interstitials (the Si3N4 and Si encapsulation layers) to create new classes of exciting optical and electronic devices such as single-electron tunneling devices, wavelength tunable photodetectors, and MOSFETs.
URI: http://hdl.handle.net/11536/146936
ISSN: 2161-4636
期刊: 2017 SILICON NANOELECTRONICS WORKSHOP (SNW)
起始頁: 107
結束頁: 108
Appears in Collections:Conferences Paper