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dc.contributor.authorDau, Nanen_US
dc.contributor.authorChen, Yen-Tingen_US
dc.contributor.authorLiao, Yu-Teen_US
dc.date.accessioned2018-08-21T05:57:01Z-
dc.date.available2018-08-21T05:57:01Z-
dc.date.issued2017-01-01en_US
dc.identifier.issn0149-645Xen_US
dc.identifier.urihttp://hdl.handle.net/11536/146953-
dc.description.abstractThis paper presents a low-power RF transmitter with harmonic injection locking and capacitive-coupling frequency multiplication techniques. To save power, the design operates at a low frequency except for the RF Class-E power amplifier. The chip, which was fabricated using 0.18 um CMOS technology, has an area of 0.49 mm X 0.93 mm. The proposed model can achieve a maximum transmission power of -21.3 dBm, data rate of 2 Mbps, and energy efficiency of 0.071nJ/bit while consuming 145 mu W.en_US
dc.language.isoen_USen_US
dc.subjectInjection-lockingen_US
dc.subjectfrequency multiplicationen_US
dc.subjectring oscillatoren_US
dc.subjectlow poweren_US
dc.subjecttransmitteren_US
dc.titleA 145 mu W 315MHz Harmonically Injection-Locked RF Transmitter with Two-Step Frequency Multiplication Techniquesen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2017 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM (IMS)en_US
dc.citation.spage1781en_US
dc.citation.epage1783en_US
dc.contributor.department電機工程學系zh_TW
dc.contributor.departmentDepartment of Electrical and Computer Engineeringen_US
dc.identifier.wosnumberWOS:000425241500480en_US
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