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dc.contributor.authorChang, Chan-Chingen_US
dc.contributor.authorChen, Chih-Hsienen_US
dc.contributor.authorPeng, Ya-Huien_US
dc.contributor.authorLee, Yeong-Shyangen_US
dc.contributor.authorHou, Chih-Yuanen_US
dc.contributor.authorHuang, Kun-Fuen_US
dc.contributor.authorShih, Houg-Taoen_US
dc.contributor.authorTseng, Fan-Shinen_US
dc.contributor.authorHsieh, Ming-Taen_US
dc.contributor.authorChen, Jenn-Fangen_US
dc.date.accessioned2018-08-21T05:57:03Z-
dc.date.available2018-08-21T05:57:03Z-
dc.date.issued2007-01-01en_US
dc.identifier.urihttp://hdl.handle.net/11536/146977-
dc.description.abstractBottom-gate microcrystalline silicon thin film transistors (mu c-Si TFTs) have been produced by the radio frequency glow discharge technique using three different plasma treatment on the interface between microcrystalline and SiN layers. Our first microcrystalline silicon TFTs have better stability at high temperature stress.en_US
dc.language.isoen_USen_US
dc.titleDevelopment of stable micro-crystalline silicon AMLCDen_US
dc.typeProceedings Paperen_US
dc.identifier.journalIDW '07: PROCEEDINGS OF THE 14TH INTERNATIONAL DISPLAY WORKSHOPS, VOLS 1-3en_US
dc.citation.spage1921en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000258483900498en_US
Appears in Collections:Conferences Paper


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