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dc.contributor.authorLee, Yih-Shingen_US
dc.contributor.authorWang, Yu-Hsinen_US
dc.contributor.authorTien, Tsung-Chengen_US
dc.contributor.authorHsieh, Tsung-Eongen_US
dc.date.accessioned2018-08-21T05:57:03Z-
dc.date.available2018-08-21T05:57:03Z-
dc.date.issued2017-01-01en_US
dc.identifier.urihttp://hdl.handle.net/11536/146992-
dc.description.abstractThe Vth shift (Delta Vth) of a-IGZO devices with gate dielectrics of Al2O3 and TEOS oxide after at a gate bias of +20V for 3600 s are +3.66V and -2.18V, respectively. Moreover, the V-th shift of two stacked dielectrics Al2O3 /TEOS oxide by using the equivalent capacitance with 100-nm-thick TEOS oxide. Two stacked dielectrics with a 10-nm-thick Al2O3 and a 96-nm-thick TEOS oxide, Delta Vth decreases to -0.42V after a gate bias of +20 V for 6400 s.en_US
dc.language.isoen_USen_US
dc.titlePositive Bias Stress Instability of In-Ga-Zn-O Thin-Film Transistors with Al2O3/TEOS Oxide Gate Dielectricsen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2017 24TH INTERNATIONAL WORKSHOP ON ACTIVE-MATRIX FLATPANEL DISPLAYS AND DEVICES (AM-FPD)en_US
dc.citation.spage205en_US
dc.citation.epage206en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000426457600060en_US
Appears in Collections:Conferences Paper