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Undoped InP sandwiched InGaAs p-i-n photodetector with partially p-doped photoabsorption layer grown on linearly graded metamorphic InxGa1-xP buffered GaAs substrate | 2 |
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六月 2024 | 七月 2024 | 八月 2024 | 九月 2024 | 十月 2024 | 十一月 2024 | 十二月 2024 | |
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Undoped InP sandwiched InGaAs p-i-n photodetector with partially p-doped photoabsorption layer grown on linearly graded metamorphic InxGa1-xP buffered GaAs substrate | 1 | 0 | 0 | 0 | 0 | 0 | 0 |
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