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dc.contributor.authorChang, Wei-Lingen_US
dc.contributor.authorSu, Jen-Yien_US
dc.contributor.authorMeng, Chinchunen_US
dc.contributor.authorChang, Chia-Hungen_US
dc.contributor.authorHuang, Guo-Weien_US
dc.date.accessioned2018-08-21T05:57:07Z-
dc.date.available2018-08-21T05:57:07Z-
dc.date.issued2017-01-01en_US
dc.identifier.issn1529-2517en_US
dc.identifier.urihttp://hdl.handle.net/11536/147062-
dc.description.abstractA V-band balanced two-stage power amplifier MMICs with Lange couplers is demonstrated using 0.15 mu m GaAs pHEMT technology in this paper. A CPWG-MS-CPWG topology with via holes at the transistors as the transition between coplanar waveguide with backside ground (CPWG) and microstrip (MS) is employed for the two-stage amplifier. CPWG is applied to realize the flip-chip transition interface for both input and output ports of the amplifier and inter-stage MS matching has the advantage of small size. The structure parameters of the CPWG Lange coupler and matching network are designed and optimized for power combining. Finally, a 60-GHz balanced two-stage power amplifier using a CPWG-MS-CPWG structure delivers the small signal gain of 18 dB, OP1dB of 12 dBm and P-sat of 15 dBm.en_US
dc.language.isoen_USen_US
dc.subjectCoplanar waveguide with backside ground (CPWG)en_US
dc.subjectflip-chipen_US
dc.subjectmicrostrip (MS)en_US
dc.subjectpseudomorphic high electron mobility transistor (pHEMT)en_US
dc.subjectpower amplifieren_US
dc.subjectpower combiningen_US
dc.titleV-band Flip-Chip pHEMT Balanced Power Amplifier with CPWG-MS-CPWG Topology and CPWG Lange Couplersen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2017 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS SYMPOSIUM (RFIC)en_US
dc.citation.spage19en_US
dc.citation.epage22en_US
dc.contributor.department電機工程學系zh_TW
dc.contributor.departmentDepartment of Electrical and Computer Engineeringen_US
dc.identifier.wosnumberWOS:000426956400005en_US
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