High Performance Bipolar Resistive Switching Characteristics in SiO2/ZrO2/SiO2 Tri-layer Based CBRAM Device

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DC 欄位	值	語言
dc.contributor.author	Kumar, Dayanand	en_US
dc.contributor.author	Aluguri, Rakesh	en_US
dc.contributor.author	Chand, Umesh	en_US
dc.contributor.author	Tseng, Tseung-Yuen	en_US
dc.date.accessioned	2018-08-21T05:57:08Z	-
dc.date.available	2018-08-21T05:57:08Z	-
dc.date.issued	2017-01-01	en_US
dc.identifier.uri	http://hdl.handle.net/11536/147104	-
dc.description.abstract	The bipolar resistive switching properties of the CBRAM device are investigated for nonvolatile memory applications in a SiO2/ZrO2/SiO2 structure. The device shows good switching characteristics with set/reset voltages less than +1 V/-1 V with a variation of less than 0.2 V. The SiO2/ZrO2/SiO2 tri-layer CBRAM device exhibits excellent memory performances, such as stable DC endurance up to 10(3) cycles during the test without degradation, good retention ability (>10(4) s) at a temperature of 100 degrees C with more than 10(2) on/off resistance ratio.	en_US
dc.language.iso	en_US	en_US
dc.subject	CBRAM	en_US
dc.subject	tri-layer structure	en_US
dc.subject	bipolar resistance switching	en_US
dc.subject	low voltage device	en_US
dc.title	High Performance Bipolar Resistive Switching Characteristics in SiO2/ZrO2/SiO2 Tri-layer Based CBRAM Device	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	2017 INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC)	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000426985900084	en_US
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