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dc.contributor.authorChen, Hsiao-Yunen_US
dc.contributor.authorChen, Chihen_US
dc.date.accessioned2014-12-08T15:20:41Z-
dc.date.available2014-12-08T15:20:41Z-
dc.date.issued2009en_US
dc.identifier.isbn978-1-4244-4475-5en_US
dc.identifier.urihttp://hdl.handle.net/11536/14710-
dc.description.abstractThermomigration in Pb-free SnAg solder joints is investigated during accelerated electromigration tests under 9.7 x 103 A/cm(2) at 150 degrees C. Different from Pb-containing solders, it is found that Cu-Sn intermetallic compounds (IMCs) migrate toward the cold end on the substrate end and thus voids accumulate in the passivation opening for the bump with current flowing from the substrate end to the chip end. Theoretical calculation indicates that the thermomigration force is greater than the electromigration force at a thermal gradient above 400 degrees C/cm. Copper atoms may migrate against current flow and become the dominant diffusion species. Also, the Q* can be estimated around I I kJ/mole. On the other hand, a control experiment shows that Ni-Sn IMCs did not migrate even tinder a huge thermal gradient over 1400 degrees C/cm.en_US
dc.language.isoen_USen_US
dc.titleIn-situ Observation of the Failure Induced by Thermomigration of Interstitial Cu in Pb-free Flip Chip Solder Jointsen_US
dc.typeArticleen_US
dc.identifier.journal2009 IEEE 59TH ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE, VOLS 1-4en_US
dc.citation.spage319en_US
dc.citation.epage324en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000271288900048-
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