Solid Solubility Limited Dopant Activation of Group III Dopants (B, Ga & In) in Ge Targeting sub-7nm Node Low p plus Contact Resistance

標題:	Solid Solubility Limited Dopant Activation of Group III Dopants (B, Ga & In) in Ge Targeting sub-7nm Node Low p plus Contact Resistance
作者:	Borland, John Lee, Yao-Jen Chuang, Shang-Shiun Tseng, Tseung-Yuen Liu, Chee-Wee Huet, Karim Goodman, Gary Marino, John 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics
公開日期:	1-Jan-2017
URI:	http://hdl.handle.net/11536/147126
期刊:	2017 17TH INTERNATIONAL WORKSHOP ON JUNCTION TECHNOLOGY (IWJT)
起始頁:	94
結束頁:	97
Appears in Collections:	Conferences Paper