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dc.contributor.authorHuang, Jen-Hsienen_US
dc.contributor.authorChen, Fang-Chungen_US
dc.contributor.authorChen, Cheng-Lunen_US
dc.contributor.authorHuang, Annie Tzuyuen_US
dc.contributor.authorHsiao, Yu-Shengen_US
dc.contributor.authorTeng, Chin-Minen_US
dc.contributor.authorYen, Feng-Wenen_US
dc.contributor.authorChen, Pelinen_US
dc.contributor.authorChu, Chih-Weien_US
dc.date.accessioned2014-12-08T15:20:41Z-
dc.date.available2014-12-08T15:20:41Z-
dc.date.issued2011-11-01en_US
dc.identifier.issn1566-1199en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.orgel.2011.06.017en_US
dc.identifier.urihttp://hdl.handle.net/11536/14713-
dc.description.abstractWe have investigated the effect of polymer molecular weight (MW) on the morphology and efficiency of bulk heterojunction (BHJ) solar cells comprised of poly[(4,4'-bis(2-ethyl-hexyl)dithieno[3,2-b: 2',3'-d] silole)-2,6-diyl-alt-(5,5'-thienyl-4,4'-dihexyl-2,2'-bithiazole)2,6- diyl] (Si-PCPDTTBT) and [6,6]-phenyl C(61) butyric acid methyl ester (PCBM). Striking morphological changes are observed in BHJ films upon the change of the polymer MW. Atomic force microscopy and transmission electron microscopy studies suggest that high MW polymer generated high degree of phase separation, leading to formation of an inter-penetrating network for carrier transport. The X-ray diffraction investigation indicated that increased pi-pi stacking in Si-PCPDTTBT with increasing polymer MWs results in an increase in hole mobility of Si-PCPDTTBT and electron mobility of PCBM as well as the red shift absorption spectrum in BHJ films. The solar cells based on PCBM with high-MW Si-PCPDTTBT deliver power conversion efficiencies of 3.33%. (C) 2011 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectSolar cellsen_US
dc.subjectBulk heterojunctionen_US
dc.subjectMolecular weighten_US
dc.subjectMorphology Phase separationen_US
dc.subjectExciton lifetimeen_US
dc.titleMolecular-weight-dependent nanoscale morphology in silole-containing cyclopentadithiophene polymer and fullerene derivative blendsen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.orgel.2011.06.017en_US
dc.identifier.journalORGANIC ELECTRONICSen_US
dc.citation.volume12en_US
dc.citation.issue11en_US
dc.citation.spage1755en_US
dc.citation.epage1762en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000295830700001-
dc.citation.woscount11-
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