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dc.contributor.authorWang, Sheng-Wenen_US
dc.contributor.authorMedina, Henryen_US
dc.contributor.authorHong, Kuo-Binen_US
dc.contributor.authorWu, Chun-Chiaen_US
dc.contributor.authorArumugam, Manikandanen_US
dc.contributor.authorSu, Teng-Yuen_US
dc.contributor.authorLee, Po-Tsungen_US
dc.contributor.authorChueh, Yu-Lunen_US
dc.contributor.authorKuo, Hao-Chungen_US
dc.date.accessioned2018-08-21T05:57:10Z-
dc.date.available2018-08-21T05:57:10Z-
dc.date.issued2017-01-01en_US
dc.identifier.issn2160-9020en_US
dc.identifier.urihttp://hdl.handle.net/11536/147143-
dc.description.abstractUsing thermal strain concept, we can tune the bandgap of bilayer MoS2 through the two different thermal expansion coefficients of sapphire. Also, we propose a simple model to explain and precisely predict the bandgap-shifted behavior.en_US
dc.language.isoen_USen_US
dc.titleRealizing thermal strain of patterned sapphire substrates dominate the bandgap-shifted of bilayer MoS2en_US
dc.typeProceedings Paperen_US
dc.identifier.journal2017 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO)en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000427296202316en_US
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