High-quality GaAs grown on aluminum film

標題:	High-quality GaAs grown on aluminum film
作者:	Cheng, Chia-Chu Wu, Chu-Chun Fan, Yen-Ting Lin, Sheng-Di 電機學院電子工程學系及電子研究所 College of Electrical and Computer Engineering Department of Electronics Engineering and Institute of Electronics
公開日期:	1-一月-2017
摘要:	We have grown GaAs layers on an aluminum nanofilm by using molecular beam epitaxy. Defect-free GaAs and InAs quantum dots are investigated with X-ray diffraction, transmission electron microscopy, and room-temperature photoluminescence.
URI:	http://hdl.handle.net/11536/147145
ISSN:	2160-9020
期刊:	2017 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO)
顯示於類別：	會議論文