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dc.contributor.authorCheng, Chia-Chuen_US
dc.contributor.authorWu, Chu-Chunen_US
dc.contributor.authorFan, Yen-Tingen_US
dc.contributor.authorLin, Sheng-Dien_US
dc.date.accessioned2018-08-21T05:57:10Z-
dc.date.available2018-08-21T05:57:10Z-
dc.date.issued2017-01-01en_US
dc.identifier.issn2160-9020en_US
dc.identifier.urihttp://hdl.handle.net/11536/147145-
dc.description.abstractWe have grown GaAs layers on an aluminum nanofilm by using molecular beam epitaxy. Defect-free GaAs and InAs quantum dots are investigated with X-ray diffraction, transmission electron microscopy, and room-temperature photoluminescence.en_US
dc.language.isoen_USen_US
dc.titleHigh-quality GaAs grown on aluminum filmen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2017 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO)en_US
dc.contributor.department電機學院zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentCollege of Electrical and Computer Engineeringen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000427296202363en_US
Appears in Collections:Conferences Paper