High-quality GaAs grown on aluminum film

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DC Field	Value	Language
dc.contributor.author	Cheng, Chia-Chu	en_US
dc.contributor.author	Wu, Chu-Chun	en_US
dc.contributor.author	Fan, Yen-Ting	en_US
dc.contributor.author	Lin, Sheng-Di	en_US
dc.date.accessioned	2018-08-21T05:57:10Z	-
dc.date.available	2018-08-21T05:57:10Z	-
dc.date.issued	2017-01-01	en_US
dc.identifier.issn	2160-9020	en_US
dc.identifier.uri	http://hdl.handle.net/11536/147145	-
dc.description.abstract	We have grown GaAs layers on an aluminum nanofilm by using molecular beam epitaxy. Defect-free GaAs and InAs quantum dots are investigated with X-ray diffraction, transmission electron microscopy, and room-temperature photoluminescence.	en_US
dc.language.iso	en_US	en_US
dc.title	High-quality GaAs grown on aluminum film	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	2017 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO)	en_US
dc.contributor.department	電機學院	zh_TW
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	College of Electrical and Computer Engineering	en_US
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000427296202363	en_US
Appears in Collections:	Conferences Paper