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dc.contributor.authorLi, Hengen_US
dc.contributor.authorCheng, Hui-Yuen_US
dc.contributor.authorChen, Wei-Liangen_US
dc.contributor.authorHuang, Yi-Hsinen_US
dc.contributor.authorLi, Chi-Kangen_US
dc.contributor.authorChang, Chiao-Yunen_US
dc.contributor.authorWu, Yuh-Rennen_US
dc.contributor.authorLu, Tien-Changen_US
dc.contributor.authorChang, Yu-Mingen_US
dc.date.accessioned2018-08-21T05:57:11Z-
dc.date.available2018-08-21T05:57:11Z-
dc.date.issued2017-01-01en_US
dc.identifier.urihttp://hdl.handle.net/11536/147167-
dc.description.abstractWe performed depth-resolved spectral mappings of GaN-based LED and results showed that the strain distribution propagating from PSS-GaN heterointerface toward surface and the PL intensity are spatially correlated. Numerical simulation based on indium composition distribution led to a radiative recombination rate distribution shows agreement with the experimental PL intensity distribution.en_US
dc.language.isoen_USen_US
dc.titleThree dimensional compressive strain and its effect on optical properties of GaN-based light emitting diode grown on patterned sapphire substrate by confocal spectromicroscopyen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2017 22ND MICROOPTICS CONFERENCE (MOC)en_US
dc.citation.spage308en_US
dc.citation.epage309en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000427705300140en_US
Appears in Collections:Conferences Paper


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