Three dimensional compressive strain and its effect on optical properties of GaN-based light emitting diode grown on patterned sapphire substrate by confocal spectromicroscopy

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DC 欄位	值	語言
dc.contributor.author	Li, Heng	en_US
dc.contributor.author	Cheng, Hui-Yu	en_US
dc.contributor.author	Chen, Wei-Liang	en_US
dc.contributor.author	Huang, Yi-Hsin	en_US
dc.contributor.author	Li, Chi-Kang	en_US
dc.contributor.author	Chang, Chiao-Yun	en_US
dc.contributor.author	Wu, Yuh-Renn	en_US
dc.contributor.author	Lu, Tien-Chang	en_US
dc.contributor.author	Chang, Yu-Ming	en_US
dc.date.accessioned	2018-08-21T05:57:11Z	-
dc.date.available	2018-08-21T05:57:11Z	-
dc.date.issued	2017-01-01	en_US
dc.identifier.uri	http://hdl.handle.net/11536/147167	-
dc.description.abstract	We performed depth-resolved spectral mappings of GaN-based LED and results showed that the strain distribution propagating from PSS-GaN heterointerface toward surface and the PL intensity are spatially correlated. Numerical simulation based on indium composition distribution led to a radiative recombination rate distribution shows agreement with the experimental PL intensity distribution.	en_US
dc.language.iso	en_US	en_US
dc.title	Three dimensional compressive strain and its effect on optical properties of GaN-based light emitting diode grown on patterned sapphire substrate by confocal spectromicroscopy	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	2017 22ND MICROOPTICS CONFERENCE (MOC)	en_US
dc.citation.spage	308	en_US
dc.citation.epage	309	en_US
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	Department of Photonics	en_US
dc.identifier.wosnumber	WOS:000427705300140	en_US
顯示於類別：	會議論文