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dc.contributor.authorLiang, Hao-Wenen_US
dc.contributor.authorChen, Hsiu-Chien_US
dc.contributor.authorLin, Chien-Hungen_US
dc.contributor.authorLee, Chia-Linen_US
dc.contributor.authorYang, Shan-Chunen_US
dc.contributor.authorChen, Kuan-Nengen_US
dc.date.accessioned2018-08-21T05:57:14Z-
dc.date.available2018-08-21T05:57:14Z-
dc.date.issued2016-01-01en_US
dc.identifier.issn2164-0157en_US
dc.identifier.urihttp://hdl.handle.net/11536/147208-
dc.description.abstractThetolerance of device morphology in wafer-level bonding through polymer-coated layer was investigated for the application of 3D integration. Several different pillar heights were fabricated on wafers to simulate the case of bonding with real devices on wafers. Overall, the wafer morphology with polymer-coated layer above devices less than 2 mu m can achieve excellent bonding quality. Furthermore, undamaged carrier wafers can be obtained after laser-assisted de-bonding technology, and post clean treatment. Based on bonding results, this research can provide a practical concept on device morphology for polymer-based temporary wafer-level bonding in 3D integration.en_US
dc.language.isoen_USen_US
dc.subjectTemporary bonding technologyen_US
dc.subject3D integrationen_US
dc.subjectDevice Morphologyen_US
dc.titleThe Influence of Device Morphology on Wafer-Level Bonding with Polymer-Coated Layeren_US
dc.typeProceedings Paperen_US
dc.identifier.journal2016 IEEE INTERNATIONAL 3D SYSTEMS INTEGRATION CONFERENCE (3DIC)en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000428196500017en_US
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