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dc.contributor.authorSu, Sheng-Kaien_US
dc.contributor.authorLi, Liang-Chenen_US
dc.contributor.authorSuen, Yuen-Wuuen_US
dc.contributor.authorWu, Jau-Yangen_US
dc.contributor.authorKuo, Hong-Rongen_US
dc.contributor.authorSung, Yu-Taien_US
dc.contributor.authorLee, Chien-Pingen_US
dc.contributor.authorVoskoboynikov, Oleksandren_US
dc.date.accessioned2019-04-02T06:01:04Z-
dc.date.available2019-04-02T06:01:04Z-
dc.date.issued2014-05-01en_US
dc.identifier.issn0034-6748en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.4872355en_US
dc.identifier.urihttp://hdl.handle.net/11536/147694-
dc.description.abstractWe report on the design and implementation of a spectral ellipsometer at near-infrared wavelength (700-1000 nm) for samples placed in high magnetic fields (up to 14 T) at low temperatures (similar to 4.2 K). The main optical components are integrated in a probe, which can be inserted into a conventional long-neck He dewar and has a very long free-space optical path (similar to 1.8 mx2). A polarizer-sample-(quarter-wave plate)-rotating analyzer configuration was employed. Two dielectric mirrors, one before and one after the sample in the optical path, helped to reflect the light back to the analyzer and a two-axis piezo-driven goniometer under the sample holder was used to control the direction of the reflected light. Functional test results performed on an intrinsic GaAs wafer and analysis on the random error of the system are shown. We obtained both amplitude and phase ellipsometric spectra simultaneously and observed helicity transformation at energies near the GaAs exciton transitions in the phase spectra. Significant shifts of them induced by magnetic fields were observed and fitted with a simple model. This system will allow us to study the collective magneto-optical response of materials and spatial dispersive exciton-polariton related problems in high external magnetic fields at low temperatures. (C) 2014 AIP Publishing LLC.en_US
dc.language.isoen_USen_US
dc.titleLow temperature and high magnetic field spectroscopic ellipsometry systemen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.4872355en_US
dc.identifier.journalREVIEW OF SCIENTIFIC INSTRUMENTSen_US
dc.citation.volume85en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.department奈米科技中心zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.contributor.departmentCenter for Nanoscience and Technologyen_US
dc.identifier.wosnumberWOS:000337104600063en_US
dc.citation.woscount1en_US
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