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dc.contributor.authorChang, Wen-Hsiangen_US
dc.contributor.authorChao, Mango C. -T.en_US
dc.contributor.authorChen, Shi-Haoen_US
dc.date.accessioned2019-04-02T06:01:04Z-
dc.date.available2019-04-02T06:01:04Z-
dc.date.issued2014-05-01en_US
dc.identifier.issn1063-8210en_US
dc.identifier.urihttp://dx.doi.org/10.1109/TVLSI.2013.2264686en_US
dc.identifier.urihttp://hdl.handle.net/11536/147696-
dc.description.abstractThis paper presents a novel framework to efficiently and effectively build a robust but routing-friendly multilayer power network under the IR-drop and electro-migration (EM) constraints. The proposed framework first considers the impact of the aluminum-pad layer and provides a conservative analytical model to determine the total metal width for each power layer that can meet the IR-drop and EM constraints. Then the proposed framework can identify an optimal irredundant stripe width by considering the number of occupied routing tracks and the potential routing detour caused by the power stripes without the information of cell placement. Next, after the cell placement is done, the proposed framework applies a dynamic-programming approach to further reduce the potential routing detour by relocating the power stripes. A series of experiments are conducted based on a 40 nm, 1.1 V, and 900-MHz microprocessor to validate the effectiveness and efficiency of the proposed framework.en_US
dc.language.isoen_USen_US
dc.subjectElectro-migration (EM)en_US
dc.subjectIR dropen_US
dc.subjectpower networken_US
dc.subjectrouting-drivenen_US
dc.titlePractical Routability-Driven Design Flow for Multilayer Power Networks Using Aluminum-Pad Layeren_US
dc.typeArticleen_US
dc.identifier.doi10.1109/TVLSI.2013.2264686en_US
dc.identifier.journalIEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMSen_US
dc.citation.volume22en_US
dc.citation.spage1069en_US
dc.citation.epage1081en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000337159500011en_US
dc.citation.woscount3en_US
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