標題: | Performance Enhancement of Flip-Chip Packaged AlGaN/GaN HEMTs Using Active-Region Bumps-Induced Piezoelectric Effect |
作者: | Tsai, Szu-Ping Hsu, Heng-Tung Chiang, Che-Yang Tu, Yung-Yi Chang, Chia-Hua Hsieh, Ting-En Wang, Huan-Chung Liu, Shih-Chien Chang, Edward Yi 材料科學與工程學系 電子工程學系及電子研究所 Department of Materials Science and Engineering Department of Electronics Engineering and Institute of Electronics |
關鍵字: | AlGaN/GaN;coefficient of thermal expansion (CTE);flip-chip (FC);high-electron mobility transistors (HEMTs);tensile strain |
公開日期: | 1-Jul-2014 |
摘要: | We experimentally investigated the impact of different bump patterns on the output electrical characteristics of flip-chip (FC) bonded AlGaN/GaN high-electron mobility transistors in this letter. The bump patterns were designed and intended to provide different levels of tensile stress due to the mismatch in the coefficient of thermal expansion between the materials. After FC packaging, a maximum increase of 4.3% in saturation current was achieved compared with the bare die when proper arrangement of the bumps in active region was designed. In other words, a 17% improvement has been observed on the optimized bump pattern over the conventional bump pattern. To the best of our knowledge, this is the first letter that investigates the piezoelectric effect induced by FC bumps leading to the enhancement in device characteristics after packaging. |
URI: | http://dx.doi.org/10.1109/LED.2014.2324619 http://hdl.handle.net/11536/147715 |
ISSN: | 0741-3106 |
DOI: | 10.1109/LED.2014.2324619 |
期刊: | IEEE ELECTRON DEVICE LETTERS |
Volume: | 35 |
起始頁: | 735 |
結束頁: | 737 |
Appears in Collections: | Articles |