标题: Performance Enhancement of Flip-Chip Packaged AlGaN/GaN HEMTs Using Active-Region Bumps-Induced Piezoelectric Effect
作者: Tsai, Szu-Ping
Hsu, Heng-Tung
Chiang, Che-Yang
Tu, Yung-Yi
Chang, Chia-Hua
Hsieh, Ting-En
Wang, Huan-Chung
Liu, Shih-Chien
Chang, Edward Yi
材料科学与工程学系
电子工程学系及电子研究所
Department of Materials Science and Engineering
Department of Electronics Engineering and Institute of Electronics
关键字: AlGaN/GaN;coefficient of thermal expansion (CTE);flip-chip (FC);high-electron mobility transistors (HEMTs);tensile strain
公开日期: 1-七月-2014
摘要: We experimentally investigated the impact of different bump patterns on the output electrical characteristics of flip-chip (FC) bonded AlGaN/GaN high-electron mobility transistors in this letter. The bump patterns were designed and intended to provide different levels of tensile stress due to the mismatch in the coefficient of thermal expansion between the materials. After FC packaging, a maximum increase of 4.3% in saturation current was achieved compared with the bare die when proper arrangement of the bumps in active region was designed. In other words, a 17% improvement has been observed on the optimized bump pattern over the conventional bump pattern. To the best of our knowledge, this is the first letter that investigates the piezoelectric effect induced by FC bumps leading to the enhancement in device characteristics after packaging.
URI: http://dx.doi.org/10.1109/LED.2014.2324619
http://hdl.handle.net/11536/147715
ISSN: 0741-3106
DOI: 10.1109/LED.2014.2324619
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 35
起始页: 735
结束页: 737
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