Compositional grading in GaAsSb grown on GaAs substrates

doi:10.1016/j.jcrysgro.2014.05.018

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Lin, Y. M.	en_US
dc.contributor.author	Chen, C. H.	en_US
dc.contributor.author	Wu, J. S.	en_US
dc.contributor.author	Lee, C. P.	en_US
dc.date.accessioned	2019-04-02T06:00:03Z	-
dc.date.available	2019-04-02T06:00:03Z	-
dc.date.issued	2014-09-15	en_US
dc.identifier.issn	0022-0248	en_US
dc.identifier.uri	http://dx.doi.org/10.1016/j.jcrysgro.2014.05.018	en_US
dc.identifier.uri	http://hdl.handle.net/11536/147767	-
dc.description.abstract	The composition profile and lattice strain of GaAsSb grown on GaAs substrates by molecular beam epitaxy have been investigated using the Rutherford backscattering spectrometry (RBS) and X-ray reciprocal space mapping. Through RBS, we found that the Sb content in the layer increases from the interface to the top surface. The X-ray reciprocal space mapping shows that the GaAsSb lattice also gradually relaxes as the layer becomes thicker. The behavior of composition grading and gradual lattice relaxation is quite different from those of III-V ternary compounds with two group Ill atoms. (C) 2014 Elsevier B.V. All rights reserved.	en_US
dc.language.iso	en_US	en_US
dc.subject	Interfaces	en_US
dc.subject	Surfaces	en_US
dc.subject	X-ray diffraction	en_US
dc.subject	Molecular beam epitaxy	en_US
dc.subject	Semiconducting ternary compounds	en_US
dc.title	Compositional grading in GaAsSb grown on GaAs substrates	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1016/j.jcrysgro.2014.05.018	en_US
dc.identifier.journal	JOURNAL OF CRYSTAL GROWTH	en_US
dc.citation.volume	402	en_US
dc.citation.spage	151	en_US
dc.citation.epage	154	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000340002400026	en_US
dc.citation.woscount	0	en_US
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