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dc.contributor.authorJheng, Bao-Tangen_US
dc.contributor.authorLiu, Po-Tsunen_US
dc.contributor.authorWu, Meng-Chyien_US
dc.date.accessioned2019-04-02T06:00:08Z-
dc.date.available2019-04-02T06:00:08Z-
dc.date.issued2014-09-01en_US
dc.identifier.issn0927-0248en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.solmat.2014.05.033en_US
dc.identifier.urihttp://hdl.handle.net/11536/147778-
dc.description.abstractCopper zinc tin sulfide (Cu2ZnSnS4, CZTS) is highly abundant in nature. It is an important absorber material for the development of low-cost and sustainable next-generation I-2-II-IV-VI4 thin-film solar cells because it has a the tunable direct band gap energy, inexpensive constituent elements, and a large absorption coefficient in the visible wavelength region. This work develops an efficient one-step vacuum-based approach to depositing CZTS films without the need to supply excess sulfur during/after deposition or to perform any post-sulfurization treatment. This one-step RF sputtering process produces CZTS films that are crystalline, phase-pure, dense, smooth, and continuous. Air Mass 1.5 G power conversion efficiencies of as high as 6% have been achieved with an antireflection coating, demonstrating that this new approach has great potential as a low-cost alternative for high-efficiency CZTS solar cell production. (C) 2014 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectSolar cellen_US
dc.subjectAntireflective coatingen_US
dc.subjectPhotoelectric devicesen_US
dc.subjectZinc oxideen_US
dc.titleA promising sputtering route for dense Cu2ZnSnS4 absorber films and their photovoltaic performanceen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.solmat.2014.05.033en_US
dc.identifier.journalSOLAR ENERGY MATERIALS AND SOLAR CELLSen_US
dc.citation.volume128en_US
dc.citation.spage275en_US
dc.citation.epage282en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.department顯示科技研究所zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.contributor.departmentInstitute of Displayen_US
dc.identifier.wosnumberWOS:000340300500036en_US
dc.citation.woscount16en_US
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