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dc.contributor.authorChang, Jung-Haoen_US
dc.contributor.authorWang, Hsiao-Fangen_US
dc.contributor.authorLin, Wei-Chiehen_US
dc.contributor.authorChiang, Kai-Mingen_US
dc.contributor.authorChen, Kuan-Chenen_US
dc.contributor.authorHuang, Wei-Chingen_US
dc.contributor.authorHuang, Zheng-Yuen_US
dc.contributor.authorMeng, Hsin-Feien_US
dc.contributor.authorHo, Rong-Mingen_US
dc.contributor.authorLin, Hao-Wuen_US
dc.date.accessioned2019-04-02T06:00:07Z-
dc.date.available2019-04-02T06:00:07Z-
dc.date.issued2014-09-07en_US
dc.identifier.issn2050-7488en_US
dc.identifier.urihttp://dx.doi.org/10.1039/c4ta02453ben_US
dc.identifier.urihttp://hdl.handle.net/11536/147788-
dc.description.abstractHere we demonstrate the fabrication of novel, "quasi-bilayer" inverted organic photovoltaic devices using halogen-free solvents. The inferior solubility of pristine fullerene in non-halogenated solvents was used to control the interpenetration of upper polymeric donor layers with bottom fullerene layers. Notably, island-like nano-morphologies were revealed by AFM, SEM, TEM, cross-sectional TEM images and PL quenching measurement. Correlation between device performance, thin-film nano-morphology and ac impedance was observed. High efficiencies of 6.55% and 7.15% were observed for PBDTTT-C-T and PTB7 cells, respectively. These results demonstrate that this novel process not only offers an effective new method to control the morphology of solar active layers but, more importantly, could also be applied to a wide range of current material systems to produce efficient devices that comply with the non-toxic halogen-free requirement.en_US
dc.language.isoen_USen_US
dc.titleEfficient inverted quasi-bilayer organic solar cells fabricated by using non-halogenated solvent processesen_US
dc.typeArticleen_US
dc.identifier.doi10.1039/c4ta02453ben_US
dc.identifier.journalJOURNAL OF MATERIALS CHEMISTRY Aen_US
dc.citation.volume2en_US
dc.citation.spage13398en_US
dc.citation.epage13406en_US
dc.contributor.department物理研究所zh_TW
dc.contributor.departmentInstitute of Physicsen_US
dc.identifier.wosnumberWOS:000340514500027en_US
dc.citation.woscount25en_US
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