標題: | Light emission from the porous boron delta-doped Si superlattice |
作者: | Chang, TC Yeh, WK Hsu, MY Chang, CY Lee, CP Jung, TG Tsai, WC Huang, GW Mei, YJ 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
公開日期: | 1-二月-1996 |
摘要: | We report the first study on the porous boron delta-doped Si superlattice. Visible photoluminescence (PL) was observed with multiple peaks from the porous boron delta-doped Si superlattice at room temperature. In the electroluminescence (EL) experiment, a bright yellow light emission was observed from the porous boron delta-doped Si superlattices. However, a weak red light emission was also observed from the conventional porous Si which is anodized at the same etching condition. As a result, the structure of the porous boron delta-doped Si superlattice has the ability of controlling the quantum size in porous Si and enhancing the light intensity from porous Si. |
URI: | http://dx.doi.org/10.1016/0169-4332(95)00297-9 http://hdl.handle.net/11536/1478 |
ISSN: | 0169-4332 |
DOI: | 10.1016/0169-4332(95)00297-9 |
期刊: | APPLIED SURFACE SCIENCE |
Volume: | 92 |
Issue: | |
起始頁: | 571 |
結束頁: | 574 |
顯示於類別: | 會議論文 |