標題: | Growth of single-crystalline cobalt silicide nanowires with excellent physical properties |
作者: | Liang, Yu-Hsin Yu, Shih-Ying Hsin, Cheng-Lun Huang, Chun-Wei Wu, Wen-Wei 材料科學與工程學系 Department of Materials Science and Engineering |
公開日期: | 1-十月-2011 |
摘要: | With the miniaturization of electron devices, the minuscule structures are important to state-of-the-art science and technology. Therefore, the growth methods and properties of nanomaterials have been extensively studied recently. Here, we use chemical vapor transport (CVT) methods to synthesize single-crystalline cobalt silicide nanowires (NWs) by using (CoCl(2)center dot 6H(2)O) as a single-source precursor. By changing reaction temperature and ambient pressure, we can obtain different morphology of cobalt silicide NWs under the appropriate concentration of silicon and cobalt. The field emission measurement of CoSi NWs shows low turn-on field (5.02 V/mu m) and it is outstanding for magnetic properties that differ from the bulk CoSi. The CoSi nanowires with different diameters have diversemagnetic saturation (Ms) and coercive force (Hc). (C) 2011 American Institute of Physics. [doi:10.1063/1.3643007] |
URI: | http://dx.doi.org/10.1063/1.3643007 http://hdl.handle.net/11536/14784 |
ISSN: | 0021-8979 |
DOI: | 10.1063/1.3643007 |
期刊: | JOURNAL OF APPLIED PHYSICS |
Volume: | 110 |
Issue: | 7 |
結束頁: | |
顯示於類別: | 期刊論文 |