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dc.contributor.authorTang, CSen_US
dc.contributor.authorChu, CSen_US
dc.date.accessioned2019-04-02T05:58:53Z-
dc.date.available2019-04-02T05:58:53Z-
dc.date.issued1998-11-01en_US
dc.identifier.issn0921-4526en_US
dc.identifier.urihttp://dx.doi.org/10.1016/S0921-4526(98)00468-2en_US
dc.identifier.urihttp://hdl.handle.net/11536/147846-
dc.description.abstractThis work investigates how a time-modulated gate-voltage influences the differential conductance G of a saddle-point constriction. The constriction is modeled by a symmetric saddle-point potential and the time-modulated gate-voltage is represented by a potential of the form V(0)Theta(a/2 - \x - x(c)\) cos(omega t). For h omega less than half of the transverse subband energy level spacing, gate-voltage-assisted (suppressed) feature occurs when the chemical potential mu is less (greater) than but close to the threshold energy of a subband. Our results indicate that as mu increases, G exhibits, alternatively, the assisted and the suppressed feature. For a larger h omega, these two features may overlap. In addition, dip structures are found in the suppressed regime, and mini-steps are found in the assisted regime only when the gate-voltage covers a region sufficiently distant from the center of the constriction. (C) 1998 Elsevier Science B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectdifferential conductanceen_US
dc.subjectquasi-bound-stateen_US
dc.subjectquantum transporten_US
dc.subjectphotocurrenten_US
dc.titleDifferential conductance of a saddle-point constriction with a time-modulated gate-voltageen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/S0921-4526(98)00468-2en_US
dc.identifier.journalPHYSICA Ben_US
dc.citation.volume254en_US
dc.citation.spage178en_US
dc.citation.epage187en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000077100000004en_US
dc.citation.woscount6en_US
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