Investigating the improvement of resistive switching trends after post-forming negative bias stress treatment

Abstract

This paper investigates the improvement of resistive switching trends after post-forming negative bias stress treatment of a Pt/Yb(2)O(3)/TiN device that has undergone positive bias forming process for activation. After the treatment, characteristics of the conductive filament, such as the temperature dependence of resistivity and transition mechanism, undergo changes. Furthermore, this treatment causes the conductive filament to transform from being primarily composed of vacancies to being metallic Yb dominant, which not only reduces operation voltages such as V(set) and V(reset) but also improves the on/off ratio. In reliability tests, the device has stable retention. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3645004]