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dc.contributor.authorChang, TCen_US
dc.contributor.authorYeh, WKen_US
dc.contributor.authorHsu, MYen_US
dc.contributor.authorChang, CYen_US
dc.contributor.authorLee, CPen_US
dc.contributor.authorJung, TGen_US
dc.contributor.authorTsai, WCen_US
dc.contributor.authorHuang, GWen_US
dc.contributor.authorMei, YJen_US
dc.date.accessioned2014-12-08T15:02:53Z-
dc.date.available2014-12-08T15:02:53Z-
dc.date.issued1996-02-01en_US
dc.identifier.issn0169-4332en_US
dc.identifier.urihttp://dx.doi.org/10.1016/0169-4332(95)00297-9en_US
dc.identifier.urihttp://hdl.handle.net/11536/1478-
dc.description.abstractWe report the first study on the porous boron delta-doped Si superlattice. Visible photoluminescence (PL) was observed with multiple peaks from the porous boron delta-doped Si superlattice at room temperature. In the electroluminescence (EL) experiment, a bright yellow light emission was observed from the porous boron delta-doped Si superlattices. However, a weak red light emission was also observed from the conventional porous Si which is anodized at the same etching condition. As a result, the structure of the porous boron delta-doped Si superlattice has the ability of controlling the quantum size in porous Si and enhancing the light intensity from porous Si.en_US
dc.language.isoen_USen_US
dc.titleLight emission from the porous boron delta-doped Si superlatticeen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1016/0169-4332(95)00297-9en_US
dc.identifier.journalAPPLIED SURFACE SCIENCEen_US
dc.citation.volume92en_US
dc.citation.issueen_US
dc.citation.spage571en_US
dc.citation.epage574en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:A1996UG56100105-
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