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dc.contributor.authorHsu, Ya-Fenen_US
dc.contributor.authorSu, Jung-Jungen_US
dc.date.accessioned2019-04-02T05:59:31Z-
dc.date.available2019-04-02T05:59:31Z-
dc.date.issued2018-08-02en_US
dc.identifier.issn1367-2630en_US
dc.identifier.urihttp://dx.doi.org/10.1088/1367-2630/aad3e1en_US
dc.identifier.urihttp://hdl.handle.net/11536/147951-
dc.description.abstractWe study theoretically the exciton-condensate/normal-barrier/exciton-condensate (EC/N/EC) structures in bilayers with a tunable relative phase ?(0) between the two exciton condensates (ECs). It is a setup inspired initially by the superconducting Josephson junction but with a special ingredient added for bilayer systems, namely, the interlayer tunneling. Our results shows that in a EC/N/EC structure of long-barrier, the single Andreev reflection at one EC/N interface dominates-as opposed to the same structure of short-barrier, in which multiple Andreev reflections can be accommodated (similar to the superconducting Josephson junctions). The single interface effect turns the other EC inert and the system can no longer be understood as a Josephson junction. The supercurrent, however, still occurs at the N/EC interface since the current conservation is still fulfilled with the assistance of the interlayer tunneling in barriers. This exotic mechanism gives rise to only a half portion from a fractional soliton of a doubled topological charge 2Q = ?(0)/pi (for the same relative phase ?(0)), as opposed to a full portion fraction soliton of charge Q = ?(0)/2 pi in the structures of short-barriers. We predict the current phase relation for the EC/N/EC structures of long-barriers which can be tested experimentally.en_US
dc.language.isoen_USen_US
dc.subjectexcitonen_US
dc.subjectJosephson junctionen_US
dc.subjectsupercurrenten_US
dc.subjectsolitonen_US
dc.subjecttopologicalen_US
dc.subjectfractionalen_US
dc.subjectbilayeren_US
dc.titleSingle interface effects dominate in exciton-condensate/normal-barrier/exciton-condensate (EC/N/EC) structures of long-barrieren_US
dc.typeArticleen_US
dc.identifier.doi10.1088/1367-2630/aad3e1en_US
dc.identifier.journalNEW JOURNAL OF PHYSICSen_US
dc.citation.volume20en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000440743600002en_US
dc.citation.woscount0en_US
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