Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Thanh-Nga Tran | en_US |
dc.contributor.author | Tu-Ngoc Lam | en_US |
dc.contributor.author | Yang, Chao-Yao | en_US |
dc.contributor.author | Lin, Wen-Chin | en_US |
dc.contributor.author | Chen, Po-Wen | en_US |
dc.contributor.author | Tseng, Yuan-Chieh | en_US |
dc.date.accessioned | 2019-04-02T05:58:37Z | - |
dc.date.available | 2019-04-02T05:58:37Z | - |
dc.date.issued | 2018-11-01 | en_US |
dc.identifier.issn | 0169-4332 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1016/j.apsusc.2018.06.292 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/148022 | - |
dc.description.abstract | CoFeB/MgO-based magnetic tunnel junctions (MTJs) have considerable potential in magnetic random access memory (MRAM), thanks to their tunable perpendicular magnetic anisotropy (PMA). We found significant reduction of dead-layer by inserting additional MgO into the MTJ structure. Interface, electronic and transport characterizations were utilized to approach the modified magnetic properties driven by the dual-MgO structure in this work. The dual-MgO structure appeared to hinder boron (B) diffusion into the metallic layer and prevent capping-layer (Ta) penetration across the interface. This suppressed the dead-layer effect and promoted overall magnetization despite PMA degradation. A robust BOx phase that formed within the dual-MgO structure presented a superparamagnetic ground state. In the single-MgO structure, any reduction in the thickness of the CoFeB promoted PMA, albeit at the cost of spin-polarization. The dual-MgO structure could restore spin-polarization by preferentially populating spin electrons into Fe/Co minority states. X-ray magnetic spectroscopy and anomalous Hall effect suggest that, the dual-MgO differs from the single-MgO with a favorable longitudinal polarized spin-channel. This makes the dual-MgO structure applicable to applications requiring in-plane rather than out-of-plane sensing. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | Magnetic random access memory | en_US |
dc.subject | Magnetic tunnel junction | en_US |
dc.subject | Perpendicular magnetic anisotropy | en_US |
dc.subject | Spin-valve | en_US |
dc.title | Superparamagnetic ground state of CoFeB/MgO magnetic tunnel junction with dual-barrier | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1016/j.apsusc.2018.06.292 | en_US |
dc.identifier.journal | APPLIED SURFACE SCIENCE | en_US |
dc.citation.volume | 457 | en_US |
dc.citation.spage | 529 | en_US |
dc.citation.epage | 535 | en_US |
dc.contributor.department | 材料科學與工程學系 | zh_TW |
dc.contributor.department | Department of Materials Science and Engineering | en_US |
dc.identifier.wosnumber | WOS:000441872300063 | en_US |
dc.citation.woscount | 0 | en_US |
Appears in Collections: | Articles |