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dc.contributor.authorChuang, JCen_US
dc.contributor.authorChen, MCen_US
dc.date.accessioned2019-04-03T06:39:21Z-
dc.date.available2019-04-03T06:39:21Z-
dc.date.issued1998-11-01en_US
dc.identifier.issn1071-1023en_US
dc.identifier.urihttp://dx.doi.org/10.1116/1.590336en_US
dc.identifier.urihttp://hdl.handle.net/11536/148024-
dc.description.abstractPassivation layers of 200 Angstrom sputtered Cr-O as well as reactive sputtered Cr-N-O were studied with respect to the passivation capability against thermal oxidation of Cu in flowing nitrogen and flowing oxygen ambients. In a flowing N-2 ambient, both Cr-O and Cr-N-O passivation layers were able to prohibit oxidation of Cu at temperatures up to 700 degrees C. In an O-2 ambient, the passivation capability of Cr-N-O layer was found to be 500 degrees C, which is 150 degrees C higher than that of Cr-O layer. The superiority of the passivation capability of the Cr-N-O layer is presumably due to decoration of the surface defects and grain boundaries with nitrogen, which provide fast paths for oxygen and copper diffusion. (C) 1998 American Vacuum Society. [S0734-211X(98)11706-7].en_US
dc.language.isoen_USen_US
dc.titleProperties of sputtered Cr-O and reactively sputtered Cr-N-O as passivation layers against copper oxidationen_US
dc.typeArticleen_US
dc.identifier.doi10.1116/1.590336en_US
dc.identifier.journalJOURNAL OF VACUUM SCIENCE & TECHNOLOGY Ben_US
dc.citation.volume16en_US
dc.citation.issue6en_US
dc.citation.spage3021en_US
dc.citation.epage3026en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000077542300019en_US
dc.citation.woscount3en_US
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