標題: | Effects of Rapid Thermal Annealing on Ar Inductively Coupled Plasma-Treated n-Type 4H-SiC Schottky and Ohmic Contacts |
作者: | Cheng, Jung-Chien Tsui, Bing-Yue 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
關鍵字: | Inductively coupled plasma (ICP) treatment;ohmic contact;Schottky-barrier diode (SBD);Schottky-barrier height (SBH);silicon carbide (SiC);specific contact resistance |
公開日期: | 1-九月-2018 |
摘要: | The effects of Ar inductively coupled plasma (ICP) treatment followed by a 600 degrees C-1000 degrees C rapid thermal annealing (RTA) on the n-type 4H-silicon carbide (SiC) Schottky-barrier diodes and n(+)-implanted ohmic contacts were investigated. The ICP treatment created a 3-nm-thick, sp(2)-C-rich, and amorphous layer at the SiC surface. The RTA repaired the bombardment-induced damages before metal deposition to avoid current degradation. This ICP + RTA-treated surface strongly pinned the Schottky- barrier height (SBH) at a minimum of 0.88 eV. In theory, the low SBH is beneficial to decrease the specific contact resistance (rho(C)). rho(C) of the ICP + RTA-treated Ti ohmic contacts decreased to lower than 10(-5) Omega.cm(2) after 400 degrees C post-metal deposition annealing (PMDA). However, the additional O atoms, fixed in the amorphous layer by RTA, affected the rho(C) reduction. Fortunately, due to the chemical affinity for O of Ti, the in-diffused Ti could contend for the O atoms against the Si-O bonds during the PMDA. Therefore, the oxidized barricade was decomposed gradually, leading to the lowest rho(C), 1.3 x 10(-6) Omega.cm(2), after 600 degrees C PMDA. The lowest rho(C) is 25x and 8x lower than that of the Ni silicide and the nontreated Ti contacts, respectively, at the same doping concentration. |
URI: | http://dx.doi.org/10.1109/TED.2018.2859272 http://hdl.handle.net/11536/148039 |
ISSN: | 0018-9383 |
DOI: | 10.1109/TED.2018.2859272 |
期刊: | IEEE TRANSACTIONS ON ELECTRON DEVICES |
Volume: | 65 |
起始頁: | 3739 |
結束頁: | 3745 |
顯示於類別: | 期刊論文 |