Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Cheng, Jung-Chien | en_US |
dc.contributor.author | Tsui, Bing-Yue | en_US |
dc.date.accessioned | 2019-04-02T05:58:38Z | - |
dc.date.available | 2019-04-02T05:58:38Z | - |
dc.date.issued | 2018-09-01 | en_US |
dc.identifier.issn | 0018-9383 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1109/TED.2018.2859272 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/148039 | - |
dc.description.abstract | The effects of Ar inductively coupled plasma (ICP) treatment followed by a 600 degrees C-1000 degrees C rapid thermal annealing (RTA) on the n-type 4H-silicon carbide (SiC) Schottky-barrier diodes and n(+)-implanted ohmic contacts were investigated. The ICP treatment created a 3-nm-thick, sp(2)-C-rich, and amorphous layer at the SiC surface. The RTA repaired the bombardment-induced damages before metal deposition to avoid current degradation. This ICP + RTA-treated surface strongly pinned the Schottky- barrier height (SBH) at a minimum of 0.88 eV. In theory, the low SBH is beneficial to decrease the specific contact resistance (rho(C)). rho(C) of the ICP + RTA-treated Ti ohmic contacts decreased to lower than 10(-5) Omega.cm(2) after 400 degrees C post-metal deposition annealing (PMDA). However, the additional O atoms, fixed in the amorphous layer by RTA, affected the rho(C) reduction. Fortunately, due to the chemical affinity for O of Ti, the in-diffused Ti could contend for the O atoms against the Si-O bonds during the PMDA. Therefore, the oxidized barricade was decomposed gradually, leading to the lowest rho(C), 1.3 x 10(-6) Omega.cm(2), after 600 degrees C PMDA. The lowest rho(C) is 25x and 8x lower than that of the Ni silicide and the nontreated Ti contacts, respectively, at the same doping concentration. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | Inductively coupled plasma (ICP) treatment | en_US |
dc.subject | ohmic contact | en_US |
dc.subject | Schottky-barrier diode (SBD) | en_US |
dc.subject | Schottky-barrier height (SBH) | en_US |
dc.subject | silicon carbide (SiC) | en_US |
dc.subject | specific contact resistance | en_US |
dc.title | Effects of Rapid Thermal Annealing on Ar Inductively Coupled Plasma-Treated n-Type 4H-SiC Schottky and Ohmic Contacts | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1109/TED.2018.2859272 | en_US |
dc.identifier.journal | IEEE TRANSACTIONS ON ELECTRON DEVICES | en_US |
dc.citation.volume | 65 | en_US |
dc.citation.spage | 3739 | en_US |
dc.citation.epage | 3745 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000442357000021 | en_US |
dc.citation.woscount | 0 | en_US |
Appears in Collections: | Articles |