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dc.contributor.authorOuYang, Binen_US
dc.contributor.authorHsu, Bailey C.en_US
dc.contributor.authorChen, Yu-Changen_US
dc.date.accessioned2019-04-02T05:58:37Z-
dc.date.available2019-04-02T05:58:37Z-
dc.date.issued2018-08-23en_US
dc.identifier.issn1932-7447en_US
dc.identifier.urihttp://dx.doi.org/10.1021/acs.jpcc.8b06710en_US
dc.identifier.urihttp://hdl.handle.net/11536/148060-
dc.description.abstractShot noise refers to the autocorrelation of current related to the quantum statistics of discrete electrons. The study of shot noise can provide a deep understanding of the quantum fluctuation of current, owing to the interference between incident and reflected electrons. Electrons experience scattering when in the mesoscopic quantum point contact with materials of intermediate lengths. Thus, electron transport is typically incoherent and quantum channels are reformed in leads through adiabatic constriction. The starting point of the shot noise theory is based on a field operator constructed from incoherent wave functions in leads. However, electron transport is coherent in single-molecule junctions with length scales smaller than the dephasing length. In investigations regarding shot noise in systems with coherent electron transport, using a field operator constructed from coherent wave functions is natural. In this study, we investigated shot noise in a 1,4-benzenedithiol single molecule junction on the basis of coherent wave functions obtained self-consistently from first-principles approaches. The theoretical value of shot noise in our calculations is S approximate to 4.03 X 10(-26) A(2)/Hz at V-Bias = 0.01 V. This value is in good agreement with that obtained from a recent experimental measurement (S approximate to 4.37 X 10(-26) A(2)/Hz).en_US
dc.language.isoen_USen_US
dc.titleQuantum Noise of Current in a 1,4-Benzenedithiol Single-Molecule Junction: First-Principle Calculationsen_US
dc.typeArticleen_US
dc.identifier.doi10.1021/acs.jpcc.8b06710en_US
dc.identifier.journalJOURNAL OF PHYSICAL CHEMISTRY Cen_US
dc.citation.volume122en_US
dc.citation.spage19266en_US
dc.citation.epage19272en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000442960300056en_US
dc.citation.woscount0en_US
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