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dc.contributor.authorWang, Shuaien_US
dc.contributor.authorDai, Jiangnanen_US
dc.contributor.authorHu, Jiahuien_US
dc.contributor.authorZhang, Shuangen_US
dc.contributor.authorXu, Linlinen_US
dc.contributor.authorLong, Hanlingen_US
dc.contributor.authorChen, Jingwenen_US
dc.contributor.authorWan, Qixinen_US
dc.contributor.authorKuo, Hao-chungen_US
dc.contributor.authorChen, Changqingen_US
dc.date.accessioned2019-04-02T06:00:53Z-
dc.date.available2019-04-02T06:00:53Z-
dc.date.issued2018-09-01en_US
dc.identifier.issn2330-4022en_US
dc.identifier.urihttp://dx.doi.org/10.1021/acsphotonics.8b00899en_US
dc.identifier.urihttp://hdl.handle.net/11536/148198-
dc.description.abstractFor the first time, an ultrahigh degree of optical polarization (DOP) of 81.8% in AlGaN-based deep ultraviolet LED (DUV-LED) operated at 286 nm has been experimentally demonstrated. The very high DOP was obtained by introducing the novel moth-eye microstructure fabricated on the backside of a sapphire substrate. Compared with conventional DUV-LED with a DOP of 64.7%, a significant 1.26-fold enhancement was obtained. It was worth mentioning that the DOP was accurately measured via self-built full spatial transverse electric (TE) and transverse magnetic (TM) mode light intensity test system, which was mainly composed of angle resolution bracket, Glan-Taylor prism, and spectrometer. For both TE and TM mode light, the extraction angle inside the semiconductor was extended from conventional (-26 degrees, 26 degrees), (-52 degrees, -41 degrees), (41 degrees, 52 degrees) to (-52 degrees, 52 degrees). Combined with finite difference time domain simulation, it was further confirmed that the novel moth-eye microstructure could notably weaken the total internal reflection at the sapphire/air interface and enlarge the light extraction angle. As a result, compared with the conventional one, DUV-LED with a moth-eye microstructure approximately doubled the light extraction efficiency.en_US
dc.language.isoen_USen_US
dc.subjectDUV-LEDen_US
dc.subjectmoth-eye microstructureen_US
dc.subjectdegree of optical polarizationen_US
dc.subjectlight extraction efficiencyen_US
dc.titleUltrahigh Degree of Optical Polarization above 80% in AlGaN-Based Deep-Ultraviolet LED with Moth-Eye Microstructureen_US
dc.typeArticleen_US
dc.identifier.doi10.1021/acsphotonics.8b00899en_US
dc.identifier.journalACS PHOTONICSen_US
dc.citation.volume5en_US
dc.citation.spage3534en_US
dc.citation.epage3540en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.department光電工程研究所zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.contributor.departmentInstitute of EO Enginerringen_US
dc.identifier.wosnumberWOS:000445322300014en_US
dc.citation.woscount0en_US
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