完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Trappen, Robbyn | en_US |
dc.contributor.author | Garcia-Castro, A. C. | en_US |
dc.contributor.author | Vu Thanh Tra | en_US |
dc.contributor.author | Huang, Chih-Yeh | en_US |
dc.contributor.author | Ibarra-Hernandez, Wilfredo | en_US |
dc.contributor.author | Fitch, James | en_US |
dc.contributor.author | Singh, Sobhit | en_US |
dc.contributor.author | Zhou, Jinling | en_US |
dc.contributor.author | Cabrera, Guerau | en_US |
dc.contributor.author | Chu, Ying-Hao | en_US |
dc.contributor.author | LeBeau, James M. | en_US |
dc.contributor.author | Romero, Aldo H. | en_US |
dc.contributor.author | Holcomb, Mikel B. | en_US |
dc.date.accessioned | 2019-04-02T06:00:25Z | - |
dc.date.available | 2019-04-02T06:00:25Z | - |
dc.date.issued | 2018-09-25 | en_US |
dc.identifier.issn | 2045-2322 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1038/s41598-018-32701-x | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/148211 | - |
dc.description.abstract | The Mn valence in thin film La0.7Sr0.3MnO3 was studied as a function of film thickness in the range of 1-16 unit cells with a combination of non-destructive bulk and surface sensitive X-ray absorption spectroscopy techniques. Using a layer-by-layer valence model, it was found that while the bulk averaged valence hovers around its expected value of 3.3, a significant deviation occurs within several unit cells of the surface and interface. These results were supported by first principles calculations. The surface valence increases to up to Mn3.7+, whereas the interface valence reduces down to Mn2.5+. The change in valence from the expected bulk value is consistent with charge redistribution due to the polar discontinuity at the film-substrate interface. The comparison with theory employed here illustrates how this layer-by-layer valence evolves with film thickness and allows for a deeper understanding of the microscopic mechanisms at play in this effect. These results offer insight on how the two-dimensional electron gas is created in thin film oxide alloys and how the magnetic ordering is reduced with dimensionality. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Electrostatic potential and valence modulation in La0.7Sr0.3MnO3 thin films | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1038/s41598-018-32701-x | en_US |
dc.identifier.journal | SCIENTIFIC REPORTS | en_US |
dc.citation.volume | 8 | en_US |
dc.contributor.department | 物理研究所 | zh_TW |
dc.contributor.department | Institute of Physics | en_US |
dc.identifier.wosnumber | WOS:000445570700006 | en_US |
dc.citation.woscount | 0 | en_US |
顯示於類別: | 期刊論文 |