完整後設資料紀錄
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dc.contributor.authorTrappen, Robbynen_US
dc.contributor.authorGarcia-Castro, A. C.en_US
dc.contributor.authorVu Thanh Traen_US
dc.contributor.authorHuang, Chih-Yehen_US
dc.contributor.authorIbarra-Hernandez, Wilfredoen_US
dc.contributor.authorFitch, Jamesen_US
dc.contributor.authorSingh, Sobhiten_US
dc.contributor.authorZhou, Jinlingen_US
dc.contributor.authorCabrera, Guerauen_US
dc.contributor.authorChu, Ying-Haoen_US
dc.contributor.authorLeBeau, James M.en_US
dc.contributor.authorRomero, Aldo H.en_US
dc.contributor.authorHolcomb, Mikel B.en_US
dc.date.accessioned2019-04-02T06:00:25Z-
dc.date.available2019-04-02T06:00:25Z-
dc.date.issued2018-09-25en_US
dc.identifier.issn2045-2322en_US
dc.identifier.urihttp://dx.doi.org/10.1038/s41598-018-32701-xen_US
dc.identifier.urihttp://hdl.handle.net/11536/148211-
dc.description.abstractThe Mn valence in thin film La0.7Sr0.3MnO3 was studied as a function of film thickness in the range of 1-16 unit cells with a combination of non-destructive bulk and surface sensitive X-ray absorption spectroscopy techniques. Using a layer-by-layer valence model, it was found that while the bulk averaged valence hovers around its expected value of 3.3, a significant deviation occurs within several unit cells of the surface and interface. These results were supported by first principles calculations. The surface valence increases to up to Mn3.7+, whereas the interface valence reduces down to Mn2.5+. The change in valence from the expected bulk value is consistent with charge redistribution due to the polar discontinuity at the film-substrate interface. The comparison with theory employed here illustrates how this layer-by-layer valence evolves with film thickness and allows for a deeper understanding of the microscopic mechanisms at play in this effect. These results offer insight on how the two-dimensional electron gas is created in thin film oxide alloys and how the magnetic ordering is reduced with dimensionality.en_US
dc.language.isoen_USen_US
dc.titleElectrostatic potential and valence modulation in La0.7Sr0.3MnO3 thin filmsen_US
dc.typeArticleen_US
dc.identifier.doi10.1038/s41598-018-32701-xen_US
dc.identifier.journalSCIENTIFIC REPORTSen_US
dc.citation.volume8en_US
dc.contributor.department物理研究所zh_TW
dc.contributor.departmentInstitute of Physicsen_US
dc.identifier.wosnumberWOS:000445570700006en_US
dc.citation.woscount0en_US
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