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dc.contributor.authorLu, Chun-Fuen_US
dc.contributor.authorShih, Cheng-Weien_US
dc.contributor.authorChen, Chien-Anen_US
dc.contributor.authorChin, Alberten_US
dc.contributor.authorSu, Wei-Fangen_US
dc.date.accessioned2019-04-02T06:00:43Z-
dc.date.available2019-04-02T06:00:43Z-
dc.date.issued2018-10-04en_US
dc.identifier.issn1616-301Xen_US
dc.identifier.urihttp://dx.doi.org/10.1002/adfm.201803145en_US
dc.identifier.urihttp://hdl.handle.net/11536/148238-
dc.description.abstractMonitoring the ammonia gas is of great interest to both environmental benefits and human health. The recent advance in polymer thin film transistors (TFTs) can realize high sensitivity and low-cost gas sensors. Ammonia gas interacts with charge carrier channels and polymer/dielectrics interface through Coulomb force. This is the first report of high sensitivity and reusable ammonia sensor fabricated from thiophene-isoindigo donor-acceptor conducting polymer. This kind of polymer has advantages of simple synthesis and excellent air stability. The systematic study is carried out to investigate relationship among chemical structure variation and morphology control of polymer to the performance of ammonia sensor. High crystallinity, favored crystal orientation, and direct percolation routes for analytes are found to be essential to increase the susceptibility of polymers to ammonia gas. By strengthening edge-on morphology, the sensitivity can be enhanced fivefold for the same polymer. The idea can put forward the development of sensor array in a time-efficient manner by employing the morphology effect.en_US
dc.language.isoen_USen_US
dc.subjectammonia sensorsen_US
dc.subjectfield-effect transistorsen_US
dc.subjectmorphologyen_US
dc.subjectpacking orientationen_US
dc.subjectpolymersen_US
dc.titleTuning the Morphology of Isoindigo Donor-Acceptor Polymer Film for High Sensitivity Ammonia Sensoren_US
dc.typeArticleen_US
dc.identifier.doi10.1002/adfm.201803145en_US
dc.identifier.journalADVANCED FUNCTIONAL MATERIALSen_US
dc.citation.volume28en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000446155700016en_US
dc.citation.woscount1en_US
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