標題: Switching Failure Mechanism in Zinc Peroxide-Based Programmable Metallization Cell
作者: Simanjuntak, Firman Mangasa
Chandrasekaran, Sridhar
Lin, Chun-Chieh
Tseng, Tseung-Yuen
電子工程學系及電子研究所
電機工程學系
Department of Electronics Engineering and Institute of Electronics
Department of Electrical and Computer Engineering
關鍵字: Resistive switching;Programmable metallization devices;Zinc peroxide;PMC
公開日期: 19-Oct-2018
摘要: The impact of peroxide surface treatment on the resistive switching characteristics of zinc peroxide (ZnO2)-based programmable metallization cell (PMC) devices is investigated. The peroxide treatment results in a ZnO hexagonal to ZnO2 cubic phase transformation; however, an excessive treatment results in crystalline decomposition. The chemically synthesized ZnO2 promotes the occurrence of switching behavior in Cu/ZnO2/ZnO/ITO with much lower operation current as compared to the Cu/ZnO/ITO (control device). However, the switching stability degrades as performing the peroxide treatment for a longer time. We suggest that the microstructure of the ZnO2 is responsible for this degradation behavior and fine tuning on ZnO2 properties, which is necessary to achieve proper switching characteristics in ZnO2-based PMC devices.
URI: http://dx.doi.org/10.1186/s11671-018-2743-7
http://hdl.handle.net/11536/148337
ISSN: 1556-276X
DOI: 10.1186/s11671-018-2743-7
期刊: NANOSCALE RESEARCH LETTERS
Volume: 13
Appears in Collections:Articles