完整後設資料紀錄
DC 欄位語言
dc.contributor.authorChen, Yu-Zeen_US
dc.contributor.authorYou, Yen-Tingen_US
dc.contributor.authorChen, Pin Jungen_US
dc.contributor.authorLi, Dapanen_US
dc.contributor.authorSu, Teng-Yuen_US
dc.contributor.authorLee, Lingen_US
dc.contributor.authorShih, Yu-Chuanen_US
dc.contributor.authorChen, Chia-Weien_US
dc.contributor.authorChang, Ching-Chenen_US
dc.contributor.authorWang, Yi-Chungen_US
dc.contributor.authorHong, Cheng-Youen_US
dc.contributor.authorWei, Tzu-Chienen_US
dc.contributor.authorHo, Johnny C.en_US
dc.contributor.authorWei, Kung-Hwaen_US
dc.contributor.authorShen, Chang-Hongen_US
dc.contributor.authorChueh, Yu-Lunen_US
dc.date.accessioned2019-04-02T05:59:46Z-
dc.date.available2019-04-02T05:59:46Z-
dc.date.issued2018-10-17en_US
dc.identifier.issn1944-8244en_US
dc.identifier.urihttp://dx.doi.org/10.1021/acsami.8b11676en_US
dc.identifier.urihttp://hdl.handle.net/11536/148345-
dc.description.abstractSelenium (Se) is one of the potential candidates as photodetector because of its outstanding properties such as high photoconductivity (similar to 8 x 10(4) S cm(-1)), piezoelectricity, thermoelectricity, and nonlinear optical responses. Solution phase synthesis becomes an efficient way to produce Se, but a contamination issue that could deteriorate the electric characteristic of Se should be taken into account. In this work, a facile, controllable approach of synthesizing Se nanowires (NWs)/films via a plasma-assisted growth process was demonstrated at the low substrate temperature of 100 degrees C. The detailed formation mechanisms of nanowires arrays to thin films at different plasma powers were investigated. Moreover, indium (In) layer was used to enhance the adhesive strength with 50% improvement on a SiO2/Si substrate by mechanical interlocking and surface alloying between Se and In layers, indicating great tolerance for mechanical stress for future wearable devices applications. Furthermore, the direct growth of Se NWs/films on a poly(ethylene terephthalate) substrate was demonstrated, exhibiting a visible to broad infrared detection ranges from 405 to 1555 nm with a high on/off ratio of similar to 700 as well as the fast response time less than 25 ms. In addition, the devices exhibited fascinating stability in the atmosphere over one month.en_US
dc.language.isoen_USen_US
dc.subjectSe nanowires arraysen_US
dc.subjectplasma-assisted selenization processen_US
dc.subjectflexible substrateen_US
dc.subjectadhesion abilityen_US
dc.subjectbroad-ranged photoresponseen_US
dc.titleEnvironmentally and Mechanically Stable Selenium 1D/2D Hybrid Structures for Broad-Range Photoresponse from Ultraviolet to Infrared Wavelengthsen_US
dc.typeArticleen_US
dc.identifier.doi10.1021/acsami.8b11676en_US
dc.identifier.journalACS APPLIED MATERIALS & INTERFACESen_US
dc.citation.volume10en_US
dc.citation.spage35477en_US
dc.citation.epage35486en_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000447954600072en_US
dc.citation.woscount1en_US
顯示於類別:期刊論文