完整後設資料紀錄
DC 欄位語言
dc.contributor.authorTrappen, Robbynen_US
dc.contributor.authorZhou, Jinlingen_US
dc.contributor.authorVu Thanh Traen_US
dc.contributor.authorHuang, Chih-Yehen_US
dc.contributor.authorDong, Shuaien_US
dc.contributor.authorChu, Ying-Haoen_US
dc.contributor.authorHolcomb, Mikel B.en_US
dc.date.accessioned2019-04-02T05:58:48Z-
dc.date.available2019-04-02T05:58:48Z-
dc.date.issued2018-11-01en_US
dc.identifier.issn1600-5775en_US
dc.identifier.urihttp://dx.doi.org/10.1107/S1600577518011724en_US
dc.identifier.urihttp://hdl.handle.net/11536/148426-
dc.description.abstractThe properties of many materials can be strongly affected by the atomic valence of the contained individual elements, which may vary at surfaces and other interfaces. These variations can have a critical impact on material performance in applications. A non-destructive method for the determination of layer-by-layer atomic valence as a function of material thickness is presented for La0.7Sr0.3MnO3 (LSMO) thin films. The method utilizes a combination of bulk- and surface-sensitive X-ray absorption spectroscopy (XAS) detection modes; here, the modes are fluorescence yield and surface-sensitive total electron yield. The weighted-average Mn atomic valence as measured from the two modes are simultaneously fitted using a model for the layer-by-layer variation of valence based on theoretical model Hamiltonian calculations. Using this model, the Mn valence profile in LSMO thin film is extracted and the valence within each layer is determined to within an uncertainty of a few percent. The approach presented here could be used to study the layer-dependent valence in other systems or extended to different properties of materials such as magnetism.en_US
dc.language.isoen_USen_US
dc.subjectX-ray absorptionen_US
dc.subjectvalenceen_US
dc.subjectmanganitesen_US
dc.subjectthin filmsen_US
dc.subjectHamiltonian calculationsen_US
dc.titleDepth-dependent atomic valence determination by synchrotron techniquesen_US
dc.typeArticleen_US
dc.identifier.doi10.1107/S1600577518011724en_US
dc.identifier.journalJOURNAL OF SYNCHROTRON RADIATIONen_US
dc.citation.volume25en_US
dc.citation.spage1711en_US
dc.citation.epage1718en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000449627100014en_US
dc.citation.woscount0en_US
顯示於類別:期刊論文