完整後設資料紀錄
DC 欄位語言
dc.contributor.authorZhang, Yuanen_US
dc.contributor.authorZhang, Yien_US
dc.contributor.authorGuo, Quanen_US
dc.contributor.authorZhong, Xianglien_US
dc.contributor.authorChu, Yinghaoen_US
dc.contributor.authorLu, Haidongen_US
dc.contributor.authorZhong, Gaokuoen_US
dc.contributor.authorJiang, Jieen_US
dc.contributor.authorTan, Congbingen_US
dc.contributor.authorLiao, Minen_US
dc.contributor.authorLu, Zhihuien_US
dc.contributor.authorZhang, Dongwenen_US
dc.contributor.authorWang, Jinbinen_US
dc.contributor.authorYuan, Jianminen_US
dc.contributor.authorZhou, Yichunen_US
dc.date.accessioned2019-04-02T05:58:47Z-
dc.date.available2019-04-02T05:58:47Z-
dc.date.issued2018-07-24en_US
dc.identifier.issn2057-3960en_US
dc.identifier.urihttp://dx.doi.org/10.1038/s41524-018-0095-6en_US
dc.identifier.urihttp://hdl.handle.net/11536/148429-
dc.description.abstractDomain orientations and their volume ratios in ferroelectrics are recognized as a compelling topic recently for domain switching dynamics and domain stability in devices application. Here, an optimized second harmonic generation method has been explored for ferroelectric domain characterization. Combing a unique theoretical model with azimuth-polarization-dependent second harmonic generation response, the complex domain components and their distributions can be rigidly determined in ferroelectric thin films. Using the proposed model, the domain structures of rhombohedral BiFeO3 films with 71 degrees and 109 degrees domain wall, and, tetragonal BiFeO3, Pb( Zr0.2Ti0.8)O-3, and BaTiO3 ferroelectric thin films are analyzed and the corresponding polarization variants are determined. This work could provide a powerful and all-optical method to track and evaluate the evolution of ferroelectric domains in the ferroelectric-based devices.en_US
dc.language.isoen_USen_US
dc.titleCharacterization of domain distributions by second harmonic generation in ferroelectricsen_US
dc.typeArticleen_US
dc.identifier.doi10.1038/s41524-018-0095-6en_US
dc.identifier.journalNPJ COMPUTATIONAL MATERIALSen_US
dc.citation.volume4en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000449674100002en_US
dc.citation.woscount1en_US
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