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dc.contributor.authorShen, Yu-Anen_US
dc.contributor.authorOuyang, Fan-Yien_US
dc.contributor.authorChen, Chihen_US
dc.date.accessioned2019-04-02T05:59:10Z-
dc.date.available2019-04-02T05:59:10Z-
dc.date.issued2019-02-01en_US
dc.identifier.issn0167-577Xen_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.matlet.2018.10.112en_US
dc.identifier.urihttp://hdl.handle.net/11536/148480-
dc.description.abstractThe effect of Sn orientation on thermomigration was investigated in Cu/Sn2.3Ag/Ni microbumps with diameter of 20 mu m. Results showed that anisotropic diffusion of Cu in Sn grains affected both formation rates and locations of Cu6Sn5 intermetallic compounds (IMCs). Rapid growth of Cu6Sn5 IMCs at the coldend interface was observed when the c-axis of Sn grains was parallel to the temperature gradient. In addition, diffusion of Cu atoms was blocked by a Sn grain with a high angle between the Sn c-axis and the thermal gradient, resulting in formation of Cu6Sn5 IMCs near the grain boundary inside the solder. (C) 2018 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectDiffusionen_US
dc.subjectGrain boundaryen_US
dc.subjectGrain orientationen_US
dc.subjectIntermetallic compoundsen_US
dc.subjectThermomigrationen_US
dc.titleEffect of Sn grain orientation on growth of Cu-Sn intermetallic compounds during thermomigration in Cu-Sn2.3Ag-Ni microbumpsen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.matlet.2018.10.112en_US
dc.identifier.journalMATERIALS LETTERSen_US
dc.citation.volume236en_US
dc.citation.spage190en_US
dc.citation.epage193en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000450594300049en_US
dc.citation.woscount2en_US
Appears in Collections:Articles