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dc.contributor.authorPai, Yung-Minen_US
dc.contributor.authorLin, Chih-Haoen_US
dc.contributor.authorLee, Chun-Fuen_US
dc.contributor.authorLin, Chun-Pengen_US
dc.contributor.authorChen, Cheng-Huanen_US
dc.contributor.authorKuo, Hao-Chungen_US
dc.contributor.authorYe, Zhi-Tingen_US
dc.date.accessioned2019-04-02T05:59:09Z-
dc.date.available2019-04-02T05:59:09Z-
dc.date.issued2018-11-01en_US
dc.identifier.issn2073-4352en_US
dc.identifier.urihttp://dx.doi.org/10.3390/cryst8110420en_US
dc.identifier.urihttp://hdl.handle.net/11536/148500-
dc.description.abstractTo realize high-efficiency AlGaN-based deep-ultraviolet light-emitting diodes (DUV-LEDs), enhancing their light-extraction efficiency (LEE) is crucial. This paper proposes an aluminum-based sidewall reflector structure that could replace the conventional ceramic-based packaging method. We design optimization simulations and experimental results demonstrated the light power output could be enhanced 18.38% of DUV-LEDs packaged with the aluminum-based sidewall.en_US
dc.language.isoen_USen_US
dc.subjectlight emitting diodeen_US
dc.subjectdeep-ultraviolet light-emitting diodeen_US
dc.subjectreflector inclined planeen_US
dc.subjectmetal diameter of cavity bottomen_US
dc.titleEnhancing the Light-Extraction Efficiency of AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes by Optimizing the Diameter and Tilt of the Aluminum Sidewallen_US
dc.typeArticleen_US
dc.identifier.doi10.3390/cryst8110420en_US
dc.identifier.journalCRYSTALSen_US
dc.citation.volume8en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.department光電工程研究所zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.contributor.departmentInstitute of EO Enginerringen_US
dc.identifier.wosnumberWOS:000451156400024en_US
dc.citation.woscount1en_US
Appears in Collections:Articles


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