完整後設資料紀錄
DC 欄位語言
dc.contributor.authorLiou, JWen_US
dc.contributor.authorChiou, BSen_US
dc.date.accessioned2019-04-02T05:58:46Z-
dc.date.available2019-04-02T05:58:46Z-
dc.date.issued2000-11-01en_US
dc.identifier.issn0957-4522en_US
dc.identifier.urihttp://dx.doi.org/10.1023/A:1008945200078en_US
dc.identifier.urihttp://hdl.handle.net/11536/148512-
dc.description.abstractThe frequency and d.c. field dependences of dielectric properties of Ba0.65Sr0.35TiO3 (BST) with various grain sizes (0.87 mum to 5.43 mum) have been studied in the paraelectric state. The frequency response is analyzed by two approximated power laws obtained on the basis of the Cole-Cole expression. The distribution of relaxation times in BST is broader for specimens with finer grains. The d.c. field is found to affect the static permittivity epsilon (0) rather than the distribution of relaxation times. The effect of the d.c. field on the dielectric permittivity is suppressed for samples with smaller grains and transition broadening is presumed to cause this suppression. It is concluded that both the temperature dependence and the frequency response of the dielectric characteristics of Ba0.65Sr0.35TiO3 are suppressed by the transition broadening. (C) 2000 Kluwer Academic Publishers.en_US
dc.language.isoen_USen_US
dc.titleAnalysis of the dielectric characteristics for polycrystalline Ba0.65Sr0.35TiO3 (I)-frequency dependence in the paraelectric stateen_US
dc.typeArticleen_US
dc.identifier.doi10.1023/A:1008945200078en_US
dc.identifier.journalJOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICSen_US
dc.citation.volume11en_US
dc.citation.spage637en_US
dc.citation.epage643en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000166360700011en_US
dc.citation.woscount24en_US
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