標題: | High-Performance Germanium Thin-Film Transistors With Single-Crystal-Like Channel via Continuous-Wave Laser Crystallization |
作者: | Li, Yi-Shao Wu, Chun-Yi Liao, Chan-Yu Huang, Wen-Hsien Shieh, Jia-Min Chou, Chia-Hsin Chuang, Kai-Chi Luo, Jun-Dao Li, Wei-Shuo Cheng, Huang-Chung 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
關鍵字: | Continuous-wave laser crystallization (CLC);single-crystal-like;polycrystalline germanium (poly-Ge);thin-film transistor (TFT);thermal strain |
公開日期: | 1-十二月-2018 |
摘要: | This letter reports of the fabrication of high-performance p-channel polycrystalline germanium (poly-Ge) thin-film transistors (TFTs) using continuous-wave laser crystallization (CLC). During the CLC process, the direction of crystallization matches the direction of laser scanning due to a strong temperature gradient in the melting region. This makes it possible to fabricate high-quality poly-Ge thin films with 1-D longitudinal grains as large as 2 mu m x 20 mu m. We fabricated the proposed p-channel CLC Ge TFTs with channel width of 0.7 mu m and a channel length each of 0.7 mu m. Consequently, the proposed p-channel CLC Ge TFTs with single-crystal-like channel fabricated on a longitudinal grain with biaxial tensile strain achieved a superior field-effect mobility of 1014.9 cm(2/)V-s. |
URI: | http://dx.doi.org/10.1109/LED.2018.2873945 http://hdl.handle.net/11536/148526 |
ISSN: | 0741-3106 |
DOI: | 10.1109/LED.2018.2873945 |
期刊: | IEEE ELECTRON DEVICE LETTERS |
Volume: | 39 |
起始頁: | 1864 |
結束頁: | 1867 |
顯示於類別: | 期刊論文 |