標題: High-Performance Germanium Thin-Film Transistors With Single-Crystal-Like Channel via Continuous-Wave Laser Crystallization
作者: Li, Yi-Shao
Wu, Chun-Yi
Liao, Chan-Yu
Huang, Wen-Hsien
Shieh, Jia-Min
Chou, Chia-Hsin
Chuang, Kai-Chi
Luo, Jun-Dao
Li, Wei-Shuo
Cheng, Huang-Chung
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Continuous-wave laser crystallization (CLC);single-crystal-like;polycrystalline germanium (poly-Ge);thin-film transistor (TFT);thermal strain
公開日期: 1-Dec-2018
摘要: This letter reports of the fabrication of high-performance p-channel polycrystalline germanium (poly-Ge) thin-film transistors (TFTs) using continuous-wave laser crystallization (CLC). During the CLC process, the direction of crystallization matches the direction of laser scanning due to a strong temperature gradient in the melting region. This makes it possible to fabricate high-quality poly-Ge thin films with 1-D longitudinal grains as large as 2 mu m x 20 mu m. We fabricated the proposed p-channel CLC Ge TFTs with channel width of 0.7 mu m and a channel length each of 0.7 mu m. Consequently, the proposed p-channel CLC Ge TFTs with single-crystal-like channel fabricated on a longitudinal grain with biaxial tensile strain achieved a superior field-effect mobility of 1014.9 cm(2/)V-s.
URI: http://dx.doi.org/10.1109/LED.2018.2873945
http://hdl.handle.net/11536/148526
ISSN: 0741-3106
DOI: 10.1109/LED.2018.2873945
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 39
起始頁: 1864
結束頁: 1867
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