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dc.contributor.authorWu, John A.en_US
dc.contributor.authorHuang, Chih-Yangen_US
dc.contributor.authorWu, Wen-Weien_US
dc.contributor.authorChen, Chihen_US
dc.date.accessioned2019-04-02T05:58:15Z-
dc.date.available2019-04-02T05:58:15Z-
dc.date.issued2018-11-01en_US
dc.identifier.issn1996-1944en_US
dc.identifier.urihttp://dx.doi.org/10.3390/ma11112287en_US
dc.identifier.urihttp://hdl.handle.net/11536/148536-
dc.description.abstractWe reported that highly (111)-oriented nanotwinned gold can be fabricated by periodical-reverse electroplating. The as-deposited films are shown to have a strong (111) preferred orientation, increasing with the reverse current time. The ratios of I-(111)/I-(220) and I-(111)/I-(200) in X-ray diffraction signals indicates a strong (111) preferred orientation. Using the advantage of the fast surface diffusion of (111) plane compared to the other planes of gold, we performed direct bonding with different thicknesses. Grain growth was observed over two films' interfaces to eliminate the bonding interface, when annealed at 250 degrees C for 1 h. Shear tests were performed to gain insight on the bonding quality. All the chips failed at either the silicon substrate or substrate-adhesion layer, showing possible higher strength than the tested maximum, 40.8 MPa.en_US
dc.language.isoen_USen_US
dc.subjectgolden_US
dc.subjectnanotwinen_US
dc.subjectpreferred orientationen_US
dc.subjectelectrodepositionen_US
dc.subjectbondingen_US
dc.titleFabrication of (111)-Oriented Nanotwinned Au Films for Au-to-Au Direct Bondingen_US
dc.typeArticleen_US
dc.identifier.doi10.3390/ma11112287en_US
dc.identifier.journalMATERIALSen_US
dc.citation.volume11en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000451755500222en_US
dc.citation.woscount0en_US
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